Parallel Reacting Flow Calculations for Chemical Vapor Deposition Reactor Design



Andrew G. Salinger, John N. Shadid, Harry K. Moffat, Scott A. Hutchinson, Gary L. Hennigan, Karen D. Devine

Sandia National Laboratories
Albuquerque, New Mexico 87185

Abstract

The MPSalsa reacting flow code has been developed at Sandia National Laboratories to compute coupled three-dimensional fluid flow and detailed reaction chemistry for model ing reacting flow systems, such as Chemical Vapor Deposition (CVD) reactors. MPSalsa has been developed to take advantage of the tremendous computational speed, memory, and scalability of distributed memory parallel computers. An unstructured finite element discretization allows for the modeling of complex geometries. Complex physics for general mixtures of ideal gases, including thermal diffusion, mixture averaged and true multi component diffusion, variable physical properties and both gas and surface reactions can be modeled. In this brief manuscript we discuss the reacting flow model and numerical method and summarize representative calculations using MPSalsa for the CVD growth of Gallium Arsenide in a horizontal reactor with a tilted rotating substrate.