Parallel Reacting Flow Calculations for Chemical Vapor Deposition
Reactor Design
Andrew G. Salinger, John N. Shadid, Harry K. Moffat, Scott A. Hutchinson, Gary L. Hennigan, Karen D. Devine
Sandia National Laboratories
Albuquerque, New Mexico 87185
Abstract
The MPSalsa reacting flow code has been developed at Sandia National
Laboratories to compute coupled three-dimensional fluid flow and
detailed reaction chemistry for model ing reacting flow systems, such
as Chemical Vapor Deposition (CVD) reactors. MPSalsa has been
developed to take advantage of the tremendous computational speed,
memory, and scalability of distributed memory parallel computers. An
unstructured finite element discretization allows for the modeling of
complex geometries. Complex physics for general mixtures of ideal
gases, including thermal diffusion, mixture averaged and true multi
component diffusion, variable physical properties and both gas and
surface reactions can be modeled. In this brief manuscript we discuss
the reacting flow model and numerical method and summarize
representative calculations using MPSalsa for the CVD growth of
Gallium Arsenide in a horizontal reactor with a tilted rotating
substrate.