Electrical Modeling
With the elimination of underground nuclear testing and declining defense budgets,
science-based stockpile stewardship requires increased reliance on high performance
modeling and simulation of weapon systems. Electrical systems and components
are major elements in today’s weapon systems. The present electrical modeling
and simulation capabilities are very limited and will be significantly expanded
by using massively parallel computational resources. Our vision is to accurately
characterize nuclear weapon electrical systems from first principles in all environments
over a 50-year lifetime.
The Electrical Modeling capability
in CCIM also includes theory and modeling of materials physics issues:
semiconductor physics with particular emphasis on the effects of radiation
induced damage on performance; electrical breakdown in dielectrics. Radiation
effects are characterized using theory and a hierarchical
multiscale computational approach. Results from quantum electronic structure
calculations (DFT) are combined with a continuum theory calculation of
radiation-induced defects in oxides and device level drift-diffusion calculations
to provide insights and data for constructing a radiation-aware, lumped
element “SPICE” model
suitable for use circuit simulators such as Xyce, Chile Spice, and P-Spice.
A general theory of electrical breakdown that we are developing is based
on a breakthrough discovery of a system that exhibits reversible electrical
breakdown, namely the Photoconductive Semiconductor Switch, and the theoretical
explanation we developed of this phenomenon.
Areas of Research:
Program Contacts: Scott
A. Hutchinson and John B. Aidun
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